Jiangxi Yuhongjin Material Technology Co., Ltd.

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ABOUT US

Jiangxi Yuhongjin Material Technology Co., Ltd.

Jiangxi Yuhongjin Material Technology Co., Ltd. is engaged in the development, manufacture and application of gallium nitride (GaN) series materials, the third generation of compound semiconductor materials. For more than 20 years, he has focused on the R&D and production of GaN material epitaxy, electronic devices, optoelectronic devices and device packaging. He has a solid theoretical foundation and rich practical experience. He has mastered the core of GaN epitaxy, device preparation and packaging. Technology, the performance of the GaN material epitaxy and devices of the company has reached the world's advanced level.

Company Profile

company advantage

core team

Honor

Epitaxy

With advanced MOCVD epitaxy equipment, it can provide:

● 4”/6”/8” inch silicon-based/silicon carbide-based/sapphire-based gallium nitride epitaxial wafers;
●650V/900V/1200V epitaxial wafers with various breakdown voltage specifications;
● 5G/6G RF epitaxial wafer;
● Depletion mode, pGaN enhancement mode and various customized epitaxial wafers;
● Epitaxial wafer thickness 2-6 microns, non-uniformity < soil 3%; .
● Epitaxial wafer warpage < 30 microns;
● Epitaxial wafer 2DEG electron concentration> 8E12cm-2;
● Electron mobility of epitaxial wafer > 1800 cm2/V s;

Chip

With GAN-based device R&D and production capabilities, a complete system has been formed from chip design to processing. Low-damage dry etching technology of GaN; film system design and preparation technology of optical anti-reflection film and high reflection film; deposition and sidewall protection technology of multi-layer metal film; optimization design of photomask plate and cross-section of photomask Forming technology; low-damage preparation and patterning technology of various passivation films; complete blue light, high A component UVC-LED manufacturing technology; GaN-based detectors, lasers and other device manufacturing technologies; GaN-based two-terminal and three-terminal Research and development of end devices and microfabrication technology.

Encapsulation

Leading integrated circuit manufacturing and technical services, providing a full range of one-stop services for finished chip manufacturing, including design simulation, technology development, product certification, wafer mid-test, wafer-level mid-channel packaging testing, system-level packaging testing, chip Finished product testing.

·Inorganic package ·Ceramic package ·Metal package

Highly integrated wafer-level packaging (WLP), 2.5D/3D packaging, system-in-package (SiP), high-performance flip-chip packaging and advanced wire bonding technology

Schottky Diode (SBD), HEMT

Deep UV Chip (UVC-LED)

Laser (LD)

Four advantages

Team Advantage

We have an excellent technical team including top experts such as Nobel Prize winners, academicians, and thousands of people. In research and development, production technology, product application, etc., there are obvious advantages of latecomer.

R&D advantage

There are GaN PA low-volume products. Once mass-produced, it will have an advantage in performance and cost;

Equipment advantage

The MOCVD equipment manufactured by Japan Taiyo Nippon Sanso Co., Ltd. can grow high-performance gallium nitride materials;
A full set of imported equipment.